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VBP104FAS, VBP104FASR
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
? Package type: surface mount
? Package form: GW, RGW
VBP104FAS
VBP104FASR
? Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
? Radiant sensitive area (in mm 2 ): 4.4
? High radiant sensitivity
? Daylight blocking filter matched with 870 nm to
950 nm emitters
? Fast response times
? Angle of half sensitivity: ? = ± 65°
? Floor life: 168 h, MSL 3, acc. J-STD-020
? Lead (Pb)-free reflow soldering
? Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
? Hologen-free according to IEC 61249-2-21 definition
in
DESCRIPTION
21726-1
APPLICATIONS
VBP104FAS and VBP104FASR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 4.4 mm 2 sensitive area and
a daylight blocking filter matched with IR emitters operating
at wavelength 870 nm or 950 nm.
PRODUCT SUMMARY
? High speed detector for infrared radiation
? Infrared remote control and free air data
transmissionsystems, e.g. in combination with TSFFxxxx
series IR emitters
COMPONENT
V BP104FAS
V BP104FASR
I ra (μA)
35
35
? (deg)
± 65
± 65
λ 0.5 (nm)
780 to 1050
780 to 1050
Note
? Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
V BP104FAS
V BP104FASR
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
PACKAGE FORM
Gullwing
Reverse gullwing
Note
? MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
TEST CONDITION
T amb ≤ 25 °C
Acc. reflow sloder profile fig. 8
SYMBOL
V R
P V
T j
T amb
T stg
T sd
R thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.2, 24-Aug-11
1
Document Number: 81169
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数
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VBP104SR 功能描述:光电二极管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5
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VBPW34FAS 功能描述:光电二极管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5
VBPW34FASR 功能描述:光电二极管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5
VBPW34S 功能描述:光电二极管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5
VBPW34SR 功能描述:光电二极管 60V 215mW 65Deg RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5
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